Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-04-11

2006-04-11

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07027325

ABSTRACT:
A magnetic random access memory according to examples of the present invention comprises a magneto resistive element MTJ, and current source circuits I1,I2and I3which give a bias current/voltage to the magneto resistive element MTJ when data in the magneto resistive element MTJ is read, wherein a value of the bias current/voltage changes depending on temperature without depending on a power supply potential.

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