Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-12-27

2005-12-27

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06980464

ABSTRACT:
An MRAM includes a magneto resistive element, which has a record layer and a reference layer disposed to sandwich a tunnel barrier film and is configured to store data in the record layer. An electric current drive line is disposed to selectively apply a magnetic field to the magneto resistive element. The record layer has a first ferromagnetic layer while the reference layer has a second ferromagnetic layer. Retentivity of retaining a magnetization direction of the second ferromagnetic layer is smaller than retentivity of retaining a magnetization direction of the first ferromagnetic layer, against a magnetic field applied to the magneto resistive element by the electric current drive line.

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