Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2008-05-20

2008-05-20

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S157000, C365S189040

Reexamination Certificate

active

07376003

ABSTRACT:
A magnetic field H1in the hard-axis direction and a magnetic field H2in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.

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