Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-05-31

2005-05-31

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S421000, C257S424000, C257S427000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

06900490

ABSTRACT:
In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.

REFERENCES:
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5768183 (1998-06-01), Zhu et al.
patent: 6794696 (2004-09-01), Fukuzumi

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