Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-06-21

2005-06-21

Baumeister, Bradley (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S003000, C257S278000, C365S097000, C365S099000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

06909129

ABSTRACT:
A magnetic random access memory includes a plurality of multi-layered memory structures that are formed within a single memory unit and connected in one of a series and a parallel configuration. Each of the plurality of multi-layered memory structures has a resistance that varies based on a magnetization direction of a ferromagnetic layer. A transistor is operatively coupled to each of the plurality of multi-layered memory structures to perform one of a memory read and a memory write operation based on a conduction state of the transistor.

REFERENCES:
patent: 5930164 (1999-07-01), Zhu
patent: 6351408 (2002-02-01), Schwarzl et al.
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6504752 (2003-01-01), Ito
patent: 2001-217398 (2001-08-01), None
patent: 2001-236781 (2001-08-01), None

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