Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-05-17
2005-05-17
Ho, Hoai (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C257S295000
Reexamination Certificate
active
06894919
ABSTRACT:
An MRAM includes a magnetoresistance element configured to store data, an electric current drive line configured to selectively apply a magnetic field to the magnetoresistance element, and a magnetic circuit configured to hold the magnetic field applied from the electric current drive line. The electric current drive line includes a first side facing the magnetoresistance element, a second side reverse to the first side, and two lateral sides between the first and second sides. The magnetic circuit includes a pair of film members consisting essentially of a ferromagnetic material and extending along the two lateral sides of the electric current drive line, such that portions facing the first and second sides of the electric current drive line are left open.
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Ho Hoai
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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