Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-03-15

2005-03-15

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000

Reexamination Certificate

active

06868003

ABSTRACT:
The present invention discloses a magnetic random access memory comprising MRAM cell groups connected in series in forms of an NAND. The MRAM cell groups comprise magnetic tunnel junctions between word lines and P-N diodes, and memory cells for reading and writing data. In the present invention, the cell size can be reduced by comprising MRAM cell arrays wherein one or more MRAM cells are connected in series in forms of an NAND.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein

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