Magnetic random access memory

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S158000

Reexamination Certificate

active

06868003

ABSTRACT:
The present invention discloses a magnetic random access memory comprising MRAM cell groups connected in series in forms of an NAND. The MRAM cell groups comprise magnetic tunnel junctions between word lines and P-N diodes, and memory cells for reading and writing data. In the present invention, the cell size can be reduced by comprising MRAM cell arrays wherein one or more MRAM cells are connected in series in forms of an NAND.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3420815

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.