Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-01-04

2005-01-04

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S171000, C365S209000, C257S295000, C257S296000

Reexamination Certificate

active

06839274

ABSTRACT:
A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.

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