Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2011-01-18

2011-01-18

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S209000

Reexamination Certificate

active

07872904

ABSTRACT:
A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.

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“1st Office Action of China Counterpart Application” issued on Dec. 25, 2009, p. 1-p. 5.

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