Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-09-20

2005-09-20

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S189050, C365S189080, C365S225500

Reexamination Certificate

active

06947318

ABSTRACT:
An information storage portion which stores tuning information is constituted by a plurality of magnetic elements & latch circuits. Each of the magnetic elements & latch circuits has two magneto-resistive effect elements, and the tuning information is stored in these elements. Complementary data are stored in the two magneto-resistive effect elements. After turning on a power supply, a power-on detection circuit outputs a transfer signal and a latch signal. When the transfer signal becomes “H”, the tuning information is transferred to the latch circuit. When the latch signal becomes “H”, the tuning information is latched to the latch circuit and supplied to the internal circuit.

REFERENCES:
patent: 6175525 (2001-01-01), Fulkerson et al.
patent: 6643195 (2003-11-01), Eldredge et al.
patent: 6687179 (2004-02-01), Baker

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