Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2011-06-28

2011-06-28

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S055000, C365S050000, C365S148000, C365S171000, C365S189140, C365S189160, C257S295000, C257S421000, C257SE27006

Reexamination Certificate

active

07969768

ABSTRACT:
A magnetic random access memory of an aspect of the present invention including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed and recording layers, wherein the magnetization directions of the fixed and recording layers are in a parallel state or in an anti-parallel state depending on a direction of a current flowing between the fixed and recording layers, a first transistor having a gate and a first current path having one end connected to the fixed layer, a second transistor having a gate and a second current path having one end connected to the recording layer, a first bit line to which other end of the first current path is connected, and a second bit line to which other end of the second current path is connected.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 7577021 (2009-08-01), Guo et al.
patent: 2007/0159875 (2007-07-01), Shimomura et al.
patent: 2007/0285974 (2007-12-01), Takemura et al.
patent: 2008/0024935 (2008-01-01), Tagami et al.
patent: 2008-10511 (2008-01-01), None
English translation of International Preliminary Report on Patentability with Written Opinion issued Dec. 23, 2010, in International Patent Application No. PCT/JP2008/056387 (International filing date Mar. 31, 2008).

Affiliated with

Also associated with

Rating

Magnetic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2716724