Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2011-01-04

2011-01-04

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S210100, C365S210140, C365S210150

Reexamination Certificate

active

07864563

ABSTRACT:
A magnetic random access memory according to an example of the invention comprises a first reference bit line shared by first reference cells, a second reference bit line shared by second reference cells, a first driver-sinker to feed a first writing current, a second driver-sinker to feed a second writing current, and a control circuit which checks data stored in the first and second reference cells line by line, and executes writing simultaneously to all of the first and second reference cells by a uniaxial writing when the data is broken.

REFERENCES:
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patent: 2003/0031045 (2003-02-01), Hosotani
patent: 2003/0123281 (2003-07-01), Iwata et al.
patent: 2004/0109353 (2004-06-01), Matsuoka
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patent: 2006/0146602 (2006-07-01), Lin et al.
patent: 2003-257177 (2003-09-01), None
patent: 2004-280892 (2004-10-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC Digest of Technical Papers, Feb. 2000, pp. 128-129.

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