Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2010-02-22
2011-11-01
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S095000, C438S096000
Reexamination Certificate
active
08048685
ABSTRACT:
A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
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Jorgenson Lisa K.
Lee Jae
Morris James H.
Richards N Drew
STMicroelectronics (Rousset) SAS
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