Magnetic RAM

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S095000, C438S096000

Reexamination Certificate

active

08048685

ABSTRACT:
A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.

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Bruce F. Cockburn, tutorial on Magnetic Tunnel Junction Magnetoresistive Random-Access Memory, Records of the 2004 International Workshop on Memory Technology, Design and Testing (MTDT '04), 1087-4852/04.
French Search Report from French Patent Application 04/53261 filed Dec. 30, 2004.
French Search Report from French Patent Application 04/53260 filed Dec. 30, 2004.

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