Magnetic RAM

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C438S003000, C257SE21665

Reexamination Certificate

active

11323060

ABSTRACT:
A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally covering the bottom of the recess and the recess portion with slanted sides and in contact, at the level of the bottom of the recess, with a conductive portion, a non-magnetic layer portion substantially conformally covering the first magnetic layer portion and a second magnetic layer portion covering the non-magnetic layer portion.

REFERENCES:
patent: 6673675 (2004-01-01), Yates et al.
patent: 6890770 (2005-05-01), Grynkewich et al.
patent: 2004/0012056 (2004-01-01), Nejad et al.
patent: 2004/0027844 (2004-02-01), Nejad et al.
patent: 2004/0052127 (2004-03-01), Suzuki et al.
French Search Report from French Patent Application 04/53260 filed Dec. 30, 2004.
French Search Report from French Patent Application 04/53261 filed Dec. 30, 2004.

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