Static information storage and retrieval – Magnetic shift registers
Reexamination Certificate
2010-02-16
2011-11-01
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Magnetic shift registers
C365S158000, C365S173000
Reexamination Certificate
active
08050074
ABSTRACT:
A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.
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Choi Hyun-ho
Kang Sang-beom
Kim Ho-jung
Kim Jong-wan
Kim Young-pil
Nguyen Tuan T.
Onello & Mello LLP
Samsung Electronics Co,. Ltd.
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