Magnetic nonvolatile memory cell and magnetic random access...

Details Magnetic nonvolatile memory cell and magnetic random access... Magnetic nonvolatile memory cell and magnetic random access...

2006-09-19

2006-09-19

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07110284

ABSTRACT:
A magnetic nonvolatile memory cell includes a C-MOSFET, a spin torque magnetization inversion layer and a tunneling magnetoresistive layer arranged in this order. The memory cell has the function of spin torque magnetization inversion and consumes very low power. A random access memory includes a plurality of the memory cells.

REFERENCES:
patent: 6963500 (2005-11-01), Tsang
T. Miyazaki, et al., “Giant magnetic tunneling effect in Fe/A12O3/Fe junction,” Journal of Magnetism and Magnetic Material 139 (1995) L231-L234.

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