Magnetic non-volatile random access memory

Details Magnetic non-volatile random access memory Magnetic non-volatile random access memory

1993-04-30

1995-03-07

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Hall effect

365171, 365 9, 365 2, 365173, G11C 1118

Patent

active

053964551

ABSTRACT:
A non-volatile random access memory is described incorporating a plurality of memory cells, each memory cell having a Hall effect device including amorphous magnetic material and a switch for directing current through the flail effect device. An array of memory cells are interconnected by word lines, current lines, and bit lines. The invention overcomes the problem of a rugged non-volatile random access memory with long term reliability.

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