Magnetic memory with static magnetic offset field

Details Magnetic memory with static magnetic offset field Magnetic memory with static magnetic offset field

2006-07-11

2006-07-11

Ngô, Ngân V. (Department: 2818)

Static information storage and retrieval

Analog storage systems

Magnetic

C365S050000, C365S055000, C365S069000, C365S098000, C365S171000, C365S173000, C257S422000

Reexamination Certificate

active

07075807

ABSTRACT:
A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 2002/0167059 (2002-11-01), Nishimura et al.
patent: 2003/0002330 (2003-01-01), Nishimura
patent: 2004/0257075 (2004-12-01), An et al.
patent: 2005/0174692 (2005-08-01), Miyauchi et al.

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