Magnetic memory with self-aligned magnetic keeper structure

Details Magnetic memory with self-aligned magnetic keeper structure Magnetic memory with self-aligned magnetic keeper structure

2006-06-27

2006-06-27

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000

Reexamination Certificate

active

07067863

ABSTRACT:
A magnetic tunneling junction (MTJ) memory cell is formed with a keeper structure on its upper conductor (write line). The keeper structure is formed by a self aligned process as three pieces: two vertical soft magnetic side pieces contacting an upper soft magnetic layer. The structure so formed completely surrounds an upper conductor and terminates on a horizontal extension of the MTJ sense layer.

REFERENCES:
patent: 5569617 (1996-10-01), Yeh et al.
patent: 6358757 (2002-03-01), Anthony
patent: 6413788 (2002-07-01), Tuttle
patent: 6417561 (2002-07-01), Tuttle
patent: 2002/0055190 (2002-05-01), Anthony
patent: 2004/0052131 (2004-03-01), Komuro et al.

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