Magnetic memory with reduced write current

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S158000, C365S117000

Reexamination Certificate

active

06868002

ABSTRACT:
There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

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