Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-07-07
2008-08-12
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07411817
ABSTRACT:
A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.
REFERENCES:
patent: 4949039 (1990-08-01), Grunberg
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5343422 (1994-08-01), Kung et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 5966323 (1999-10-01), Chen et al.
patent: 6021065 (2000-02-01), Daughton et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6654278 (2003-11-01), Engel et al.
patent: 6960815 (2005-11-01), Yoda et al.
patent: 7006375 (2006-02-01), Covington
patent: 2003/0117839 (2003-06-01), Ooishi
patent: 2003/0123282 (2003-07-01), Nickel et al.
patent: 2003/0206434 (2003-11-01), Leuschner
patent: 2005/0002228 (2005-01-01), Dieny et al.
patent: 2005/0040433 (2005-02-01), Nozieres et al.
patent: 2005/0047206 (2005-03-01), Nozieres et al.
patent: 2006/0056114 (2006-03-01), Fukumoto et al.
patent: 2 829 867 (2003-03-01), None
patent: 2 829 868 (2003-03-01), None
patent: 2 832 542 (2003-05-01), None
patent: 2003-060173 (2003-02-01), None
patent: WO 00/79540 (2000-12-01), None
patent: WO 03/077257 (2003-09-01), None
Zheng, Y.K., et al., “Multistate Per-cell Magnetoresistive Random-Access Memory Written at Curie Point,” IEEE Transactions on Magnetics, IEEE Inc., New York, US, vol. 38, No. 5 (Sep. 2002), pp. 2850-2852.
Wang, J., et al., “Low-Current Blocking Temperature Writing of Double Barrier Magnetic Random Access Memory Cells,” Applied Physics Letters, American Institute of Physics, New York, US, vol. 84, No. 6 (Feb. 9, 2004), pp. 945-947.
Saito, Y., et al., “Bias Voltage and Annealing-Temperature Dependences of Magnetoresistance Ratio in Ir-Mn Exchange-Biased Double Tunnel Junctions,” Journal of Magnetism and Magnetic Materials, vol. 223, Issue 3, Feb. 2001, pp. 293-298. Abstract only.
Daughton, J.M. , et al., “Magnetic Tunneling Applied to Memory(Invited),” Journal of Applied Physics, Apr. 15, 1997, vol. 81, Issue 8, pp. 3758-3763 Abstract only.
Dieny Bernard
Nozieres Jean-Pierre
Prejbeanu Ioan-Lucian
Redon Olivier
Sousa Ricardo
Burr & Brown
Centre National de la Recherche Scientifique
Commissariat a l''Energie Atomique
Elms Richard T.
Nguyen Nam T
LandOfFree
Magnetic memory with a magnetic tunnel junction written in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory with a magnetic tunnel junction written in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory with a magnetic tunnel junction written in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4013594