Magnetic memory unit having four states and operating method the

Details Magnetic memory unit having four states and operating method the Magnetic memory unit having four states and operating method the

1998-02-26

1999-07-27

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetoresistive

G11C 1100

Patent

active

059301643

ABSTRACT:
A new structure of a magnetoresistive random access memory (MRAM) is presented for a high density and fast access operations. The MRAM includes two magnetic memory cells separated by an electrically conductive layer, each cell having two magnetic layers separated by a barrier layer forming a tunneling junction. Each memory cell contains one bit information as directions of magnetic vectors which are switched by an external magnetic field and sensed by a sense current flowing in the MRAM unit. The current creates a drop voltage over the MRAM unit, which indicates four different values according to the states stored in MRAM unit.

REFERENCES:
patent: 5604357 (1997-02-01), Hori
patent: 5640343 (1997-06-01), Gallagher
patent: 5650958 (1997-07-01), Gallagher
patent: 5764567 (1998-06-01), Parkin
patent: 5801984 (1998-09-01), Parkin

Affiliated with

Also associated with

Rating

Magnetic memory unit having four states and operating method the does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory unit having four states and operating method the, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory unit having four states and operating method the will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886752