Magnetic memory structure with improved half-select margin

Details Magnetic memory structure with improved half-select margin Magnetic memory structure with improved half-select margin

1999-07-28

2000-10-17

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365 55, 365 66, G11C 1114

Patent

active

061341398

ABSTRACT:
A magnetic memory with enhanced half-select margin includes an array of magnetic memory cells each having a data storage layer with an easy axis and an array of conductors each having an angle of orientation with respect to the easy axes that is preselected to enhance half-select margin in the magnetic memory. The angle of orientation is such that the longitudinal write field is enhanced and the perpendicular write field is minimized in a selected memory cell. The magnetic memory cells optionally includes a structured data storage layer including a control layer that minimizes the likelihood of half-select switching in the unselected magnetic memory cells.

REFERENCES:
patent: 3577134 (1971-05-01), Bergman
patent: 4887236 (1989-12-01), Schloemann
patent: 5155642 (1992-10-01), Voegeli
patent: 5587943 (1996-12-01), Torok et al.
patent: 5605733 (1997-02-01), Ishikawa et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5793697 (1998-08-01), Scheuerlein

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