Magnetic memory structure using heater lines to assist in...

Details Magnetic memory structure using heater lines to assist in... Magnetic memory structure using heater lines to assist in...

2007-03-27

2007-03-27

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S066000, C365S171000, C365S214000

Reexamination Certificate

active

11105054

ABSTRACT:
The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

REFERENCES:
patent: 4424578 (1984-01-01), Miyamoto
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6535416 (2003-03-01), Daughton et al.
patent: 6603678 (2003-08-01), Nickel et al.

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