Magnetic memory element, magnetic memory having said...

Details Magnetic memory element, magnetic memory having said... Magnetic memory element, magnetic memory having said...

2011-06-21

2011-06-21

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000, C365S172000, C365S048000, C365S055000, C365S074000, C365S097000, C365S131000

Reexamination Certificate

active

07965544

ABSTRACT:
An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.

REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 2002/0105823 (2002-08-01), Redon et al.
patent: 2007/0159875 (2007-07-01), Shimomura et al.
patent: 2002-261352 (2002-09-01), None
patent: 2007-134027 (2007-05-01), None
patent: 2007-310949 (2007-11-01), None

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