Magnetic memory device, write current drive circuit, and...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S173000

Reexamination Certificate

active

06996001

ABSTRACT:
A magnetic memory device includes a magneto-resistance effect element including a magnetic sensitive layer whose magnetization direction changes according to an external magnetic field; a write line to which a write current is supplied to apply an external magnetic field to the magnetic sensitive layer; and a write current drive circuit including a current direction control section for controlling the direction of the write current in the write line and a current amount control section for controlling the amount of the write current in the write line to a constant value.

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patent: 5894447 (1999-04-01), Takashima
patent: 6269027 (2001-07-01), Hurst, Jr. et al.
patent: 6515838 (2003-02-01), Gill
patent: 6881497 (2005-04-01), Coffey et al.
patent: WO 2004/049344 (2004-06-01), None
R. Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE International Solid-State Circuits Conference, Session 7, Paper 7.2, 2000, pp. 128-129.
U.S. Appl. No. 10/669,561, filed Sep. 25, 2003, Ezaki et al.
U.S. Appl. No. 10/717,595, filed Nov. 21, 2003, Ezaki et al.

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