Magnetic memory device with reference cell for data reading

Details Magnetic memory device with reference cell for data reading Magnetic memory device with reference cell for data reading

2005-05-24

2005-05-24

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S209000, C365S210130

Reexamination Certificate

active

06898113

ABSTRACT:
In a normal data reading, one of word lines and one of first and second dummy word lines are selected and data is read out through the access to selected regular memory cell and a reference cell. In a test mode, each of word lines are turned to a non-select state and both of first and second dummy word lines are selected and by setting one of first and second reference voltages to a level different from a level during the normal data reading, data is read out through the access to the reference cells.

REFERENCES:
patent: 6055178 (2000-04-01), Naji
patent: 6754099 (2004-06-01), Hidaka
patent: 6788568 (2004-09-01), Hidaka
patent: 2002-222589 (2002-08-01), None
U.S. Appl. No. 10/260,397, filed Oct. 1, 2002, Tanizaki et al.

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