Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-05-23
2006-05-23
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07050326
ABSTRACT:
One embodiment of a magnetic memory cell includes a first line and a sense layer in electrical communication with the first line. A reference layer line is configured to carry a sense current received from the sense layer. The sense current flows from the first line through the sense layer and away from the memory cell via the reference layer to determine a resistive state of the memory cell.
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Hewlett--Packard Development Company, L.P.
Nguyen Hien
Nguyen Tuan T.
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