Magnetic memory device using SOI substrate

Details Magnetic memory device using SOI substrate Magnetic memory device using SOI substrate

2005-09-20

2005-09-20

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S315000

Reexamination Certificate

active

06946712

ABSTRACT:
A magnetic memory device includes an SOI substrate having a first semiconductor layer, a first insulating film formed on the first semiconductor layer, and a second semiconductor layer formed on the first insulating film, an element isolation insulating film formed selectively in the second semiconductor layer extending from a surface of the second semiconductor layer with a depth reaching the first insulating film, a switching element formed in the second semiconductor layer, a magneto-resistive element connected to the switching element, a first wiring extending in a first direction at a distance below the magneto-resistive element, and a second wiring formed on the magneto-resistive element and extending in a second direction different from the first direction.

REFERENCES:
patent: 5838608 (1998-11-01), Zhu et al.
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6172903 (2001-01-01), Nishimura
patent: 6178074 (2001-01-01), Gill
patent: 6518588 (2003-02-01), Parkin et al.
patent: 9-45074 (1997-02-01), None
Roy Scheuerlein, et al. “A 10NS Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” ISSCC 2000 Technical Digest, 2000. pp. 128-129.

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