Magnetic memory device using domain structure and...

Details Magnetic memory device using domain structure and... Magnetic memory device using domain structure and...

2007-12-14

2010-06-22

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Hall effect

Reexamination Certificate

active

07742333

ABSTRACT:
Disclosed is a memory device using a multi-domain state of a semiconductor material, and more particularly to a magnetic memory device, in which a ferromagnetic layer for recording magnetic data serves as a sensing layer so as to have a simple structure, shorten a manufacturing process, and reduce the unit cost of production. The planar hall effect or magneto-resistance is used to measure multi-domain states so as to read data stored in a multi-level state.

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