Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-10-02
2007-10-02
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S207000
Reexamination Certificate
active
10550105
ABSTRACT:
A magnetic memory device and a sense amplifier circuit capable of obtaining a read signal output with a high S/N ratio and reducing power consumption and a circuit space, and a method of reading from a magnetic memory device are provided. In a sense amplifier, transistors (41A), (41B) which are differential amplifiers are commonly connected to one constant current circuit (50) through switches (46) ( . . . ,46n, 46n+1, . . . ). Corresponding bit decode lines (20) ( . . . ,20n, 20n+1, . . . ) and a read selection signal line (90) are connected to the switches (46) ( . . . ,46n, 46n+1, . . . ). A read/write signal is transferred from the read selection signal line (90), and the switches (46) operate according to a bit decode value and the read/write signal.
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ISSCC 2000/Session 7/TD: Emerging Memory & Device Technologies/Paper TA7.2; pp. 128-129.
Ezaki Joichiro
Kakinuma Yuji
Koga Keiji
Sumita Shigekazu
Oliff & Berridg,e PLC
Phung Anh
TDK Corporation
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