Magnetic memory device, method for writing on the same and...

Details Magnetic memory device, method for writing on the same and... Magnetic memory device, method for writing on the same and...

2005-08-16

2005-08-16

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S066000

Reexamination Certificate

active

06930911

ABSTRACT:
Each memory cell is constituted by a pair of magnetic memory elements. The magnetic memory elements are connected at one ends to sense bit lines, and at the other ends to a sense word line through a pair of reverse current preventing diodes, respectively. A constant current circuit is disposed on the grounded side of the sense word line. The constant current circuit has a function of fixing a current flowing through the sense word line, and is constituted by a constant voltage generating diode, a transistor and a current limiting resistor.

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