Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-06-18
2009-06-16
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S209000
Reexamination Certificate
active
07548450
ABSTRACT:
The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.
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Fujitsu Limited
Mai Son L
Westerman, Hattori, Daniels & Adrian , LLP.
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