Magnetic memory device, method for writing magnetic memory...

Details Magnetic memory device, method for writing magnetic memory... Magnetic memory device, method for writing magnetic memory...

2007-07-17

2007-07-17

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S209000

Reexamination Certificate

active

11081524

ABSTRACT:
The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.

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