Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-11-01
2005-11-01
Mai, Son L. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S030000
Reexamination Certificate
active
06960815
ABSTRACT:
A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.
REFERENCES:
patent: 6201259 (2001-03-01), Sato et al.
patent: 6548849 (2003-04-01), Pan et al.
patent: WO 00/10172 (2000-02-01), None
Amano Minoru
Asao Yoshiaki
Hosotani Keiji
Kishi Tatsuya
Miyamoto Junichi
Mai Son L.
Nguyen Thinh T
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