Magnetic memory device having soft reference layer

Details Magnetic memory device having soft reference layer Magnetic memory device having soft reference layer

2005-05-10

2005-05-10

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S171000, C365S173000, C365S213000, C365S232000

Reexamination Certificate

active

06891212

ABSTRACT:
A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.

REFERENCES:
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6538920 (2003-03-01), Sharma et al.
patent: 19836567 (2000-02-01), None
patent: 10106860 (2001-08-01), None
patent: 0875901 (1998-11-01), None

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