Magnetic memory device having magnetic circuit and method of...

Details Magnetic memory device having magnetic circuit and method of... Magnetic memory device having magnetic circuit and method of...

2005-04-19

2005-04-19

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000

Reexamination Certificate

active

06882564

ABSTRACT:
A magnetic memory device includes first and second magnetoresistance elements. The first and second magnetoresistance elements store information and are provided apart from each other in a first direction. A first wiring to apply a magnetic field to the first and second magnetoresistance elements is provided along the first direction. A first magnetic circuit is formed along a side of the first wiring and has a notch in its portion between the first and second magnetoresistance elements.

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Roy Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and Fet Switch In Each Cell” ISSCC 2000, Session 7/ TD: Emerging Memory & Device Technologies/ Paper TA 7.2, 2000, pp. 128-129.
Masahige Sato, et al. “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions” Jpn. J. Appl. Phys. vol. 36, Feb. 15, 1997, pp. L200-L201.
Koichiro Inomata, et al. “Spin-Dependent Tunneling Between a Soft Ferromagnetic Layer and Hard Magnetic Nanosize Particles” Jpn. J. Appl. Phys., vol. 36, Oct. 15, 1997, pp. L1380-L1383.

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