Magnetic memory device capable of passing bidirectional...

Details Magnetic memory device capable of passing bidirectional... Magnetic memory device capable of passing bidirectional...

2005-09-27

2005-09-27

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S173000, C365S171000, C365S158000, C365S226000

Reexamination Certificate

active

06950369

ABSTRACT:
A plurality of word lines (WL1) are provided in parallel to one another and a plurality of bit lines (BL1) are provided in parallel to one another, intersecting the word lines (WL1) thereabove. MRAM cells (MC2) are formed at intersections of the word lines and the bit lines therebetween. MRAM cells (MC3) are provided so that an easy axis indicated by the arrow has an angle of 45 degrees with respect to the bit lines and the word lines. Thus, an MRAM capable of cutting the power consumption in writing is achieved and further an MRAM capable of reducing the time required for erasing and writing operations is achieved.

REFERENCES:
patent: 4943952 (1990-07-01), Terayama
patent: 5193074 (1993-03-01), Anami
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5852574 (1998-12-01), Naji
patent: 5946228 (1999-08-01), Abraham et al.
patent: 5982660 (1999-11-01), Bhattacharyya et al.
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6445612 (2002-09-01), Naji
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 1 094 467 (2001-04-01), None
patent: 05-095055 (1993-04-01), None
patent: 63-044398 (1998-02-01), None
patent: 11-289186 (1999-10-01), None
Scheuerlein, R.E.: Magneto-Resistive IC memory Limitations and Architecture Implications, IEEE Nonvolatile Memory Technology Conference, Jun. 22-24, 1998, 47-50.
Itoh, K. et al.,: “Reviews and Prospects of High-Density RAM Technology” International Semiconductor Conference Proceedings, vol. 1, Oct. 10-14, 2000, 13-22.
Scheuerlein, R. et al.,: “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, 128-129.
Durlam, M. et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, IEEE International Solid-State Circuits Conference, Feb. 7-9, 2000, 130-131.
Johnson, M.: “Magnetoelectronic memories last and last”, IEEE Spectrum vol. 37 No. 2 Feb. 2000, 33-40.

Affiliated with

Also associated with

Rating

Magnetic memory device capable of passing bidirectional... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory device capable of passing bidirectional..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory device capable of passing bidirectional... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3414719