Stacked 1T-nMTJ MRAM structure

Details Stacked 1T-nMTJ MRAM structure Stacked 1T-nMTJ MRAM structure

2005-09-06

2005-09-06

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S097000, C365S087000, C365S066000, C365S055000, C365S048000, C365S033000

Reexamination Certificate

active

06940748

ABSTRACT:
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor16is used to read multiple MRAM cells, which can be stacked vertically above one another a plurality of MRAM array layers arranged in a “Z” axis direction.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 5969380 (1999-10-01), Seyyedy
patent: 6349054 (2002-02-01), Hidaka
patent: 6356477 (2002-03-01), Tran
patent: 6445613 (2002-09-01), Nagai
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6570795 (2003-05-01), Fricke et al.
patent: 6577529 (2003-06-01), Sharma et al.
patent: 6608776 (2003-08-01), Hidaka
patent: 6631085 (2003-10-01), Scheuerlein et al.
patent: 6671213 (2003-12-01), Ohtani
patent: 6680862 (2004-01-01), Hidaka
patent: 6693825 (2004-02-01), Sharma et al.
patent: 6717222 (2004-04-01), Zhang
patent: 6724653 (2004-04-01), Iwata et al.
patent: 6754124 (2004-06-01), Seyyedy et al.
patent: 2000/0012228 (2001-08-01), Perner
patent: 2001/0012228 (2001-08-01), Perner
patent: 2001/0038548 (2001-11-01), Perner et al.
patent: 2002/0080641 (2002-06-01), Asao et al.
patent: 2002/0093845 (2002-07-01), Matsuoka et al.
patent: 2002/0132375 (2002-09-01), Doan et al.
patent: 2002/0135018 (2002-09-01), Hidaka
patent: 2002/0140000 (2002-10-01), Watanabe
patent: 2002/0140016 (2002-10-01), Cha
patent: 2002/0140060 (2002-10-01), Asao et al.
patent: 2003/0047765 (2003-03-01), Campbell
patent: 2003/0058686 (2003-03-01), Ooishi et al.
patent: 2003/0067013 (2003-04-01), Ichihara et al.
patent: 2002/0103377 (2003-06-01), Kajiyama
patent: 2003/0206453 (2003-11-01), Joo
patent: 2003/0223292 (2003-12-01), Nejad et al.
patent: 2003/0227795 (2003-12-01), Seyyedy et al.
patent: 2004/0213044 (2004-10-01), Seyyedy et al.
patent: 1 109 170 (2001-06-01), None
patent: 1 109 170 (2001-06-01), None
patent: 1 321 941 (2003-06-01), None
patent: 2000 187976 (1998-12-01), None
patent: 2001217398 (2000-03-01), None
patent: 2001357666 (2000-06-01), None
patent: 02002170376 (2002-06-01), None
patent: 02003100071 (2003-04-01), None
patent: 2004023062 (2004-01-01), None
SaiedTehrani, “MTJ based MRAM System Design”, Mar. 2001, Motorola Labs (Physical Sciences Research Lab), Session G5-Recent Applications and Sciences of M<agnetic Tunnel Junctions, p. 1 of 1.
How Magnetic RAM Will Work (accessed Nov. 19, 2001) <http://www.howstuffworks.com/mram2.htm>.
MTJ Based MRAM System Design (accessed Nov. 19, 2001) <http://www.aps.org/meet/MAR01/baps/abs/S2550004.html>.
Motorola Demonstrates Revolutionary Memory Technology (accessed Nov. 19, 2001) <http://www.apspg.com/press/060100/mram-final.html>.
Computing Unplugged (accessed Nov. 19, 2001) <http://www.research.ibm.com/thinkresearch/pages/2001/20010202-mram.shtml>.
Magnetic Tunnel Junction Materials for Electronic Applications (accessed Nov. 19, 2001) <http://www.tms.org/pubs/journals/JOM/0006/Slaughter/Slaughter-0006.html>.
Magneto-Electronics: Magnetic Tunnel Junctions (accessed Nov. 19, 2001) <http://www.almaden.ibm.com/st/projects/magneto/mtj/>.
U.S. 2002/037595, filed Mar. 2002, Hosotani.
U.S. Appl. No. 10/214,167, filed Aug. 8, 2002, Nejad, Hasan, et al.
U.S. Appl. No. 10/166,363, Jun. 11, 2002, Mirmajid, Seyyedy, et al.

Affiliated with

Also associated with

Rating

Stacked 1T-nMTJ MRAM structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked 1T-nMTJ MRAM structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked 1T-nMTJ MRAM structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3414720