Magnetic memory device and write method of magnetic memory...

Details Magnetic memory device and write method of magnetic memory... Magnetic memory device and write method of magnetic memory...

2007-07-17

2007-07-17

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S172000, C365S173000

Reexamination Certificate

active

11255111

ABSTRACT:
A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.

REFERENCES:
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patent: 6879475 (2005-04-01), Kishi et al.
patent: 2006/0238191 (2006-10-01), Saito
D. C. Worledge, “Magnetic phase diagram of two identical coupled nanomagnets”, Applied Physics Letters, vol. 84, No. 15, Apr. 12, 2004, pp. 2847-2849.
M. Durlam, et al., “A 0.18μm 4Mb Toggling MRAM”, IEDM Tech. Dig. 2003, pp. 995-997.

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