Static information storage and retrieval – Read/write circuit – Serial read/write
Reexamination Certificate
2006-11-28
2006-11-28
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Serial read/write
C365S171000, C365S173000, C365S158000
Reexamination Certificate
active
07142474
ABSTRACT:
A magnetic memory device includes magnetoresistance-effect storage elements arranged so as to store information by using a change in a magnetization direction of a storage area of each of the storage elements, and a control unit. The control unit controls a polarity of a first wiring current for generating a recording auxiliary magnetic field in a direction of a hard magnetization axis of the storage area, and a polarity of a second wiring current for generating a recording magnetic field in a direction of an easy magnetization axis of the storage area. Each of the first and second wiring currents has a first polarity when generating a “1” and a second polarity, different from the first polarity, when generating a “0”.
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Bessho Kazuhiro
Kano Hiroshi
Phung Anh
Wendler Eric J.
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