Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-04-01
2008-04-01
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07352613
ABSTRACT:
A nonvolatile memory device is disclosed. The device includes a substrate, at least one relatively high permeability conductive line, and at least one magnetoresistive memory cell separated from the at least one relatively high permeability conductive line by an insulating material and located in a region of a magnetic field induced in the relatively high permeability conductive line. Methods of making such devices are also disclosed.
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Ho Chia-Hua
Hsieh Kuang-Yeu
Baker & McKenzie LLP
Macronix International Co. Ltd.
Mai Son L.
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