Magnetic memory device and method of writing into the same

Details Magnetic memory device and method of writing into the same Magnetic memory device and method of writing into the same

2008-06-09

2009-11-03

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S225500, C365S243500

Reexamination Certificate

active

07613035

ABSTRACT:
A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ1, MTJ2and a select transistor connected to the connection node of the magnetoresistance effect elements MTJ1, MTJ2, a first signal line extended in a first direction and connected to the magnetoresistance effect element MTJ1, a second signal line extended in the first direction and connected to the magnetoresistance effect element MTJ2, and a third signal line extended in a second direction and crossing the first signal line in a region where the magnetoresistance effect element MTJ1is formed and crossing the second signal line in a region where the magnetoresistance effect element MTJ2is formed. When memory information is written into the memory cell, the memory information to be memorized is switched by directions of write currents to be flowed to the first and the second signal lines.

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