Magnetic memory device and method of reading the same

Details Magnetic memory device and method of reading the same Magnetic memory device and method of reading the same

2007-04-24

2007-04-24

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

10547508

ABSTRACT:
The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A,21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A,12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A,12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A,12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.

REFERENCES:
patent: 5343422 (1994-08-01), Kung et al.
patent: 5629922 (1997-05-01), Moodera et al.
patent: 6191989 (2001-02-01), Luk et al.
patent: 2002/0006058 (2002-01-01), Nakajima et al.
patent: 2002/0054500 (2002-05-01), Yamada
patent: 2002/0140000 (2002-10-01), Watanabe
patent: 2002/0186582 (2002-12-01), Sharma et al.
patent: 2004/0001351 (2004-01-01), Subramanian et al.
patent: 2005/0146926 (2005-07-01), Inaba
patent: 2006/0215443 (2006-09-01), Katti
patent: 1 109 170 (2000-12-01), None
patent: 1 406 266 (2004-04-01), None
patent: A 9-91949 (1997-04-01), None
patent: A 2001-236781 (2001-08-01), None
patent: A 2001-266567 (2001-09-01), None
patent: A 2001-273759 (2001-10-01), None
patent: A 2002-170374 (2002-06-01), None
patent: A 2002-353415 (2002-12-01), None
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC 2000/Session 7/TD: Emerging Memory & Device Technologies/Paper TA 7.2, Digest of Technical Papers, pp. 128-129.

Affiliated with

Also associated with

Rating

Magnetic memory device and method of reading the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic memory device and method of reading the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory device and method of reading the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3799948