Magnetic memory device and method of reading information

Details Magnetic memory device and method of reading information Magnetic memory device and method of reading information

2006-02-28

2006-02-28

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S190000

Reexamination Certificate

active

07006374

ABSTRACT:
A memory cell of a magnetic memory device has an MTJ element and one end of the memory cell is selectively electrically connected to a ground potential line. A first bit line is electrically connected to the other end of the memory cell. A sense amplifier amplifies a difference in potential between the first bit line and a second bit line complementary to the first bit line so that the difference is equal to or larger than a difference between an internal power potential and a ground potential. A connection circuit disconnects the MTJ element from an electric connection between the ground potential line and the sense amplifier.

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Kohtaroh Gotoh, et al., et al., “A 0.9 V Sense-Amplifier Driver for High-Speed GB-Scale DRAMs”, IEEE, Symposium on VLSI Circuits Digest of Technical Papers, Jun. 1996, pp. 108-109.
K-C. Lee, et al., “Low Voltage High Speed Circuit Designs for Giga-bit DRAMs”, IEEE, Symposium on VLSI Circuits Digest of Technical Papers, Jun. 1996, pp. 104-105.

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