Magnetic memory device and method of manufacturing the same

Details Magnetic memory device and method of manufacturing the same Magnetic memory device and method of manufacturing the same

2005-11-15

2005-11-15

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S659000

Reexamination Certificate

active

06965138

ABSTRACT:
A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

REFERENCES:
patent: 5946228 (1999-08-01), Abraham et al.
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6737691 (2004-05-01), Asao
patent: 6829162 (2004-12-01), Hosotani

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