Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-08
2005-11-08
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21665, C257SE27005, C257S315000, C257S421000, C365S158000, C365S173000
Reexamination Certificate
active
06963099
ABSTRACT:
A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first surface and a second surface. The second surface faces the magnetoresistance element and the first surface is opposite to it. The second surface is smaller in width than the first surface.
REFERENCES:
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patent: 6556473 (2003-04-01), Saito et al.
Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using A Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC 2000, Digest Paper TA 7.2, pp. 128-129.
Sato, et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys. vol. 36, (1997) pp. L 200-L 201.
Inomata, et al., “Spin-Dependent Tunneling Between a Soft Ferromagnetic Layer and Hard Magnetic Nanosize Particles”, Jpn. J. Appl. Phys. vol. 36, (1997) pp. L 1380-L 1383.
Kabushiki Kaisha Toshiba
Nelms David
Tran Mai-Huong
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