Magnetic memory device and method of manufacturing the same

Details Magnetic memory device and method of manufacturing the same Magnetic memory device and method of manufacturing the same

2005-07-05

2005-07-05

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257SE27006, C438S003000

Reexamination Certificate

active

06914284

ABSTRACT:
A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

REFERENCES:
patent: 6746875 (2004-06-01), Okazawa et al.
U.S. Appl. No. 10/615,920, filed Jul. 10, 2003, Hosotani et al.
U.S. Appl. No. 10/722,514, filed Nov. 28, 2003, Nakajima et al.
Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC Digest of Technical Papers, 2000, Session 7, Paper TA 7.2.
Masashige Sato et al., “Spin-Valve-Like Properties and Annealing Effect in Ferromagnetic Tunnel Junctions”, IEEE Transactions on Magnetics, 1997, vol. 33, No. 5, pp. 3553-3555.
Masashige Sato et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys., 1997, vol. 36, Part 2, pp. 200-201.
Koichiro Inomata et al., “Spin-Dependent Tunneling between a Soft Ferromagnetic Layer and Hard Magnetic Nanosize Particles”, Jpn. J. Appl. Phys., 1997, vol. 36, Part 2, pp. 1380-1383.

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