Magnetic memory device and method of manufacturing magnetic...

Details Magnetic memory device and method of manufacturing magnetic... Magnetic memory device and method of manufacturing magnetic...

2007-01-02

2007-01-02

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257S296000, C257SE27005, C438S003000

Reexamination Certificate

active

10950399

ABSTRACT:
The present invention provides a magnetic memory device capable of stably writing information by efficiently using a magnetic field generated by current flowing in a conductor, which can be manufactured more easily, and a method of manufacturing the magnetic memory device. The method includes: a stacked body forming step of forming a pair of stacked bodies S20aand S20bon a substrate31;a lower yoke forming step of forming a lower yoke4B so as to cover at least the pair of stacked bodies S20aand S20b;and a write line forming step of simultaneously forming a pair of first parts6F and write bit lines5aand5bso as to be disposed adjacent to each other in a first level L1via an insulating film7A as a first insulating film on the lower yoke4B. Thus, the manufacturing process can be more simplified.

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